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Lead tin telluride is a ternary alloy of lead, tin, and tellurium, generally made by alloying either tin into lead telluride or lead into tin telluride. It is a narrow bandgap semiconductor material.
The bandgap is tuned by varying the composition(x) in the material. SnTe can be alloyed with Pb (or PbTe with Sn) to tune the bandgap from (SnTe). Lead Telluride Powder important to note that unlike chalcogenides, e.g. cadmium, mercury, and zinc chalcogenides, the bandgap in Te does not change linearly between the two extremes. In contrast, as the composition (x) is increased, the bandgap decreases approach zero in the concentration regime (0.32–0.65 corresponding to temperature 4-300 K, respectively) and further increases towards the bulk bandgap of SnTe. Therefore, the lead-tin telluride alloys have narrower band gaps than their endpoint counterparts making lead tin telluride an ideal candidate for mid-infrared, 3–14 μm optoelectronic application.
Lead Telluride Powder has a positive temperature coefficient i.e. for a given composition x, the bandgap increases with temperature. Therefore, temperature stability has to be maintained while working with lead-tin telluride based laser. However, the advantage is that the operating wavelength of the laser can simply be tuned by varying the operating temperature.
The optical absorption coefficient of lead-tin telluride is typical ~750 cm−1 as compared to ~50 cm−1 for the extrinsic semiconductors such as doped silicon. The higher optical coefficient value not only ensures higher sensitivity but also reduces the spacing required between individual detector elements to prevent optical cross-talk making integrated circuit technology easily.
Storage Conditions:
Airtight sealed, avoid light and keep dry at room temperature.
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