신고사유
신고해주신 내용은 쇼핑몰 운영자의 검토 후 내부 운영 정책에 의해 처리가 진행됩니다.
The crystal structure of Gallium Phosphide(GaP) is a sphalerite type, which is an indirect transition type semiconductor. It is one of the main substrate materials for LEDs.
The Gallium Phosphide(GaP) epitaxial material is obtained by liquid-phase epitaxy or vapor-phase epitaxy and diffusion growth on a gallium phosphide single crystal substrate. The GaP is mostly used to manufacture light-emitting diodes. The GaP liquid-phase epitaxial material can produce red, green, yellow-green light-emitting diodes. And the GaP Vapor-phase epitaxial and diffusion-grown material can produce yellow, yellow-green light-emitting diodes.
*재고 소진시 발주후 3~4주 소요됩니다
게시물이 없습니다
게시물이 없습니다